Hi,
CCD, charge coupled device. Readout is by popping charges from pixels to pixels like a bucket line. So in a 24 MP sensor the most unfortunately placed pixel is moved about 10000 times before reaching the readout amplifier, 4000 vertical pops and 6000 horisontal pops. CCDs have often up to 6 readout channels. I don't know how they are interleaved.
CMOS, Complimentary Metal Oxide Semiconductor, means in essence that voltages are measured on each pixel in situ. That means that the charge can be measured multiple times. This is used for a technique called correlated double sampling that can be used to reduce noise.
Actually, while we are defining things, that use of the name "CMOS" for modern sensor types is widespread but rather misses the point, since all sensors are MOS devices, and "CMOS vs n-MOS vs p-MOS" is not the significant design difference. The far more informative description used in technical documents is
Active Pixel Sensor, which is often abbreviated to "APS" – but I can see why that could be confusing, given the weird tradition of using that failed film format as an indication of sensor size. Active pixel sensor designs are usually implemented as CMOS devices, but Panasonic has made some with n-MOS, and CCD's are built with p-MOS or n-MOS.
The key distinction of the active pixel sensor design is that the signal (the charge on a tiny capacitor, aka electron well) is read out via the voltage induced by that charge without moving the charge, allowing for amplification in the transfer (the "active" part) as well as direct transfer photosite-to-edge, and repeated reading of the charge, for noise reduction.
Also, about "interleaving": the CCD hop count is often halved by having read-out of each quadrant of the sensor to the nearest corner, with an ADC at each corner. So on a 6000X4000 sensor, each line does up to 3000 hops to the nearest edge, and then each charge on each half line does up to 2000 hops along the edge to the nearest corner (or with 2000 and 3000 swapped.)