I have had a chance to read through Jonathans post again and would like to clarify some of the aspects of his proposal.
The first is that the photodetector is a current source and generates current proportional to the amount of illumination falling upon it. It does have a capacitance, but in normal design the capacitance of the photo-detector is minimised to improve its responsiveness to changes in illumination. The capacitance of the pixel is determined by the parasytic capacitance of a number of elements (which does include the photodetector, but also the junctions of transistors as well).
The photo-detector can operate in two configurations. Reverse biased (polarity of the voltage is negative) and forward biased (polarity of the voltage is positive). In the reverse biased configuration the current generated by the photodetector is linearly proportional to the illumination falling on it; this is the typical operating mode in a digital camera. In forward biased mode the photodetector is non linear and is the mode which is typically used in a video camera to increase dynamic range. In the forward biased mode the photodetector is in series with a resistor and the voltage across the resistor is propotional to the instantaneous illumination falling on the photodetector. The capacitance of the configuration is minimised to ensure that the detector has a responsiveness to prevent smearing of the image between frames. The disadvantage of this configuration is that it is noisy compared with the reverse biased configuration which is described next.
In the reverse biased case additional capacitance is engineered into the solution. A reset transistor (t1) is closed for a short period of time to charge this capacitor to maximum potential. The potential on the capacitor (Cpx) holds the photo-detector in reverse bias and the current generated by the photo-detector slowly discharges the capacitor for the duration that the circuit is illuminated to light. The charge remaining on the capacitor at the end of the exposure is proportional to the integral of the illumination falling on the photodetector during the exposure period. The advatange of this design is that the measurement of light is more sensitive and the influence of noise is minimised.
The following diagram shows a typical three transistor active CMOS pixel design (though there are others) with the modifications suggested by Jonathan in the green box - making a total of four transistors.
The circuit works as described in the preceding paragraph. When the camera control circuit wishes to read the voltage on the capacitor it raise the voltage on the Row line, opening transistor (T2) and reading the voltage from the column line through (T3). Once the value has been read then the pixel can be reset by charging the capacitor up to full voltage again prior to the next exposure.
Jonathan's modification suggests introducing a resistor into the design as shown R to provide an RC decay curve during exposure of the photo-detector. Whilst Jonathan described this as being parrallel to the capacitor I have drawn it here in series, however, the net effect is the same. When the exposure commences transistor (t4) is opened for the duration of the exposure. The photodetector generates current and reduces the charge (in an exponential decay curve) until the voltage on the capacity reaches a certain voltage. This voltage is equal to the current flowing through the photodetector at the given illumination multiplied by the value of resistance R, once we reach this voltage the capacitor will be neither charging or discharging. Therefore, the ultimate settling voltage on the capacitor is determined by the illumination on the photodetector, and because the current is linearly proportional to the illumination the final voltage is linearly proportional to the illumination as well. Therefore, whilst we will get an exponential decay curve, that decay curve will be different for each level of illumination on the photo-detector. For this particular design the photodetector will need to be illuminated for a minimum period, defined by the RC decay curve, and the final voltage will still be linear with respect to illumination.
The following graph shows the voltage on the capacitor versus exposure time at two levels of illumination. The blue curve has twice the illumination of the red curve. For very low illumination (which Jonathan was hoping we could get a boost in signal as per a gamma curve) the signal becomes very weak (very low final settling voltage), except for very long exposure; for larger signals we need a long exposure to retain accuracy in the measurement (because of the effect of the RC curve and the need to allow the voltage to settle).
The end result is that we end up with a linear version of the forward biased design, but with worse performance in terms of sensitivity and smearing between adjacent symbols.
Other downsides to the modification are:
1/ Additional components in the pixel area reduce the fill factor (in this case by perhaps 10-15%) reducing sensitivity of the system.
2/ Dark current noise is sensitive to temperature and doubles with every 8 degree C rise in temperature. Introducing a heat generating source directly into the pixel (the resistor) will only make dark current noise performance worse.
3/We have no certainty of what voltage will be produced on the capacitor for a given exposure - except through complex measurement and mathematics.
A final note:
The dynamic range of the pixel is determined by the maximum voltage swing across the capacitor that can be measured. This is limited by transistor T1 which has a voltage drop of approx (0.8v) so that the capacitor cannot be charged to the full supply voltage, and the output of T3 which is 0.8v less than the value of the charge on the capacitor. The impact of this is that as the transistor size is made smaller then the safe operating voltage of them is reduced. However, for maximum dynamic range we want as large a voltage as possible. Therefore, even though there is opportunity to make smaller components on the sensor due to improvements in lithography this may not always be to the photographers advantage. However, as most people are aware the larger the transistor the lower the fill factor of the pixel and the lower its sensitivity. So we have a trade off (of sorts) between dynamic range and sensitivity. As the pixel size gets smaller then this trade off becomes more accute. The question I have is that even though Nikon now have a 12Mpix camera with potentially as good noise and sensitivity as canon, have they sacrificed dynamic range? This may not be the case, as there are tricks and design changes from the above to increase the voltage swing that can be measured on the capacitor, but ultimately smaller pixels will cramp the performance that can be obtained.
Well, I hope the above is useful. As everyone is fessing up to technical backgrounds I am a Member of the Institute of Electrical Engineers (UK equivalent of the IEEE), hence the background in technology. Its a while since I dealt at this level of design directly, so apologies for any inaccuracies, but on the whole it should be correct.
ciao ciao